A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Simple item page
dc.citation.issue20
dc.citation.volume10
dc.contributor.authorAli SMA
dc.contributor.authorHasan SMR
dc.contributor.editorEbrahimi A
dc.date.accessioned2023-10-19T22:23:45Z
dc.date.accessioned2023-10-25T20:49:33Z
dc.date.available2021-10-09
dc.date.available2023-10-19T22:23:45Z
dc.date.available2023-10-25T20:49:33Z
dc.date.issued2021-10-09
dc.date.updated2023-10-18T20:16:11Z
dc.description.abstractThis paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.
dc.description.confidentialfalse
dc.edition.editionOctober 2021
dc.identifier2450
dc.identifier.citationAli SMA, Hasan SMR. (2021). A 6 ghz integrated high-efficiency class-f<sup>−1</sup> power amplifier in 65 nm cmos achieving 47.8% peak pae. Electronics (Switzerland). 10. 20.
dc.identifier.doi10.3390/electronics10202450
dc.identifier.eissn2079-9292
dc.identifier.elements-typejournal-article
dc.identifier.harvestedMassey_Dark
dc.identifier.urihttp://hdl.handle.net/10179/20391
dc.languageEnglish
dc.publisherMDPI (Basel, Switzerland)
dc.publisher.urihttps://www.mdpi.com/2079-9292/10/20/2450
dc.relation.isPartOfElectronics (Switzerland)
dc.rights(c) 2021 The Author/sen_US
dc.rightsCC BYen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.subjectClass-F
dc.subjectinverse Class-F
dc.subjectCMOS
dc.subjectpower amplifier
dc.subjecthigh efficiency
dc.subject5G
dc.subjectmobile communications
dc.subject6 GHz
dc.titleA 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE
dc.typeJournal article
pubs.elements-id449049
pubs.organisational-groupOther
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
449049 PDF.pdf
Size:
2.48 MB
Format:
Adobe Portable Document Format
Description:
Download
Collections
Journal Articles